Copper Diamond (Cu/Diamond) Heat Sink Materials
UKing Diamond’s factory-direct Cu/Diamond metal matrix composites (MMC) combine thermal conductivity of 500–1000 W/m·K with tailored CTE matching, making them ideal heat sink materials for GaN, SiC, RF power, optoelectronic, and advanced semiconductor packaging applications.
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Description
Uking Diamond’s Copper Diamond (Cu/Diamond) composite materials are premier metal-matrix thermal solutions. Unlike brittle pure diamond plates, these composites can be pressed into near-net shapes or machined into complex profiles, making them highly adaptive for multi-component surface metallization and advanced brazing/soldering lines:
- High-Power Semiconductor Lasers: Serves as submounts for high-wattage laser diodes and laser bars, effectively relieving localized heat localization.
- Radar TR Modules & Electronic Countermeasures: Provides mass-producible, vibration-resistant thermal baseplates for military and commercial radar systems.
- Aerospace Thermal Management: Delivers robust, radiation-immune heat dissipation brackets for deep-space communication hardware.
- IGBT & Power Electronic Modules: Acts as the critical interface material in electric vehicles and high-voltage traction inverters to prevent severe thermal cycling fatigue.
Technical Specifications
| Physical & Mechanical Parameters | Typical Technical Control Value |
| Material Base Architecture | Copper Matrix (Cu) + Premium Synthetic Diamond Grids |
| Thermal Conductivity | 500 – 1000 W/m⋅K (2x to 2.5x higher than pure copper |
| Coefficient of Thermal Expansion | 8.2×10−6 /K (8.2 ppm/K) (Perfectly matches GaN/SiC chips) |
| Flexural Strength | ≥400 MPa (High mechanical robustness against structural shock) |
| Material Density | 6.1 g/cm3 (Optimized lightweight profiling compared to pure copper) |
| Dimensional Length/Width Tolerance | ±0.05 mm (High precision CNC machining capability) |
| Thickness Customization Range | 0.5 mm – 1.0 mm (Standard micro-plate profiles) |
| Machining Tolerance | ±30 μm (Ensures high-precision component alignment) |
| Surface Roughness | <1 μm (Laser-flat surface for superior die-attach bonding) |
DIMENSIONS & SURFACE FINISH
Available Forms · Plate,bar,customized shapes · Hole, slot, notch processing available · Surface metalization and bonding treatment available |  | Surface Finish · Front Surface Roughness: Ra < 30 nm (< 2 nm customizable) · Back Surface Roughness: 30 nm-2 μm (etchable, customizable) · Thickness:0.5-1 mm customizable · TTV: 50 μm (2 inch) customizable |
Product Details
1. Engineered CTE Matching to Prevent Die Cracking
The ultimate nightmare in packaging Gallium Nitride (GaN) or GaAs chips is the CTE mismatch. Pure copper expands too fast, causing the fragile chip to crack under thermal cycles. Uking’s Copper Diamond materials solve this bottleneck.
By dispersing high-purity synthetic diamond particles inside a ductile copper matrix, we achieve a stabilized Coefficient of Thermal Expansion of 8.2 ppm/K. This sits perfectly within the thermal expansion safety window of semiconductor substrates, eliminating packaging stress and ensuring your chips survive severe on/off power cycling without delamination.
2. Near-Net Shape Fabrication & Superior Machine ability
While pure CVD diamond plates offer unrivaled thermal metrics, they are incredibly brittle and notoriously difficult to cut or drill. Our Copper Diamond composites combine the ultra-high heat dissipation of diamond (∼1000 W/m⋅K) with the excellent machine ability of copper.
We utilize advanced powder metallurgy infiltration to create near-net shapes with complex mounting holes, steps, and counter bores. With a surface roughness of Ra<1 μm, these components are ready for direct Ni/Au or Ti/Pt/Au metallization and high-reliability eutectic brazing.
Key Features & Material Advantages
· High Thermal Throughput: Reaches a thermal conductivity up to 1000W/m.k, instantly channeling heat away from localized semiconductor gates.
· Tailored Low Expansion Profile: Stabilized 8.2 ppm/K thermal expansion protects fragile electronic components from mechanical fatigue during rapid thermal swings.
· High Structural & Flexural Toughness: Flexural strength exceeding 400MPa ensures the baseplates endure harsh mechanical vibrations in automotive and aerospace installations.
· Excellent Metallization & Soldering Adaptation: Compatible with standard PVD sputtering and plating processes, facilitating seamless wire bonding and component assembly.
Are your high-power RF modules or laser bars suffering from thermal runaway or die cracking due to poor CTE matching?
Don’t compromise electronic package reliability with uncalibrated cooling baseplates. With 20 years of MMC manufacturing experience in Henan, China, UKing Diamond delivers precision-engineered Copper Diamond heat sinks for semiconductor thermal management.
Given the precision manufacturing requirements of Cu/Diamond composites, we offer structured evaluation batches rather than unqualified free samples — ensuring every test unit meets your exact thermal and dimensional specifications.
Ready to validate Cu/Diamond thermal performance for your application? Send us your target specifications (length, width, thickness) and we will arrange a prioritized evaluation batch at factory-direct pricing — with 100% of the sample cost credited toward your first bulk order.
FAQ
Q: What is a Diamond-Copper (Cu/Diamond) composite and why is it used in power electronic packaging?
A: Diamond-Copper (Cu/Diamond) composite is a metal matrix composite (MMC) consisting of synthetic diamond particles (40–75 vol%) infiltrated with or sintered into a copper matrix. The result is a material that combines the high thermal conductivity of both copper (390 W/m·K) and diamond (1,000–2,000 W/m·K), producing a composite thermal conductivity of 550–800 W/m·K – significantly higher than pure copper – while the diamond fraction reduces the coefficient of thermal expansion (CTE) from copper’s 17 ppm/°C toward the 6–8 ppm/°C range of silicon and GaN. This CTE matching to device substrates is critical in power electronics packaging: CTE mismatch between a heat spreader and the chip it bonds to generates cyclic thermal stress at the solder interface, leading to fatigue cracking and device failure. Cu/Diamond composites address both the thermal conductivity requirement and the CTE compatibility requirement simultaneously.
Q: What thermal and mechanical properties does Diamond-Copper composite provide?
A: Typical properties for high-quality Cu/Diamond composite (60 vol% diamond, copper matrix, optimized interfacial carbide formation): thermal conductivity 600–750 W/m·K (room temperature); CTE 7–9 ppm/°C (20-150 °C); density 5.5-6.0 g/cm3 (lighter than pure copper at 8.9 g/cm3); flexural strength 200-350 MPa; thermal conductivity retention at 150 °C approximately 80% of room-temperature value. Surface finish after diamond grinding and lapping: Ra<0.4 μm for standard heat spreader bonding faces; Ra<0.1 μm for precision grade. The key processing parameter for achieving high thermal conductivity is the quality of the diamond-copper interface: carbide interlayer formation (via Ti, Cr, or B coating on diamond particles) during sintering is required to eliminate the thermal resistance of an unbonded diamond-copper interface.
Q: What are the standard product forms and dimensions available for Diamond-Copper composite?
A: Uking Diamond Diamond-Copper composites are available as:
(1) Heat spreader plates – standard sizes from 10×10 mm to 100×100 mm, thickness 1–5 mm; custom shapes and laser-cut profiles on request.
(2) Heat sink substrates – with CNC-machined fin structures or integrated cooling channels for liquid cooling.
(3) Printed circuit board mounting bases – with Ni/Au surface plating for soldering.
(4) Custom near-net-shape parts – produced by powder infiltration casting near to final geometry, reducing machining cost on complex geometries.
Standard delivery includes thermal conductivity test report, CTE measurement, and dimensional inspection. Surface metallization (Ni electroless + Au flash, or Ti/Cu/Ni/Au sputter stack) available for solder attach compatibility.
