CVD Diamond Heat Sink Plates & Thermal Spreaders
UKing Diamond’s factory-direct CVD diamond heat sink plates and thermal spreaders deliver industry-leading thermal conductivity and superior heat dissipation for high-power laser diodes, RF devices, and power electronics requiring advanced thermal management.
Request a Quote
Enter the quantity you need and add to your quote list for pricing inquiries.
Description
The Ultimate Thermal Management Solution for Next-Gen High-Power Electronics
Through advanced Chemical Vapor Deposition (CVD) synthesis under rigorous microwave plasma (MPCVD) parameter control, Uking Diamond delivers polycrystalline diamond heat sinks with premium isotropic thermal conductivity surpassing 1200 to 2000 W/m·K.
Engineered to eliminate localized hotspots and thermal run-away, our micro-discs and submounts serve as the critical foundation for high-power optoelectronics, wide-bandgap semiconductors (GaN/SiC), RF microwave amplifiers, and aerospace radar modules.
PRODUCT SPECIFICATIONS
| Thickness(μm) | Customizable upon request | Flexural Strength (MPa) | 450－1100 |
| Density(g/cm³) | 3.3216 | Young’s Modulus (GPa) | 1000-1100 |
| Thermal Conductivity (W/m-K) | TC1200, TC1500, TC1800, TC2000 | Dielectric Constant (1MHz) | 5.68 |
| Thermal Diffusivity(cm³/s) | 6.6, 8.2, 9.9 | Dielectric Loss(1MHz) | 6.2×10－8 |
| Thermal Expansion Coefficient (RT-700°C) (10-6/K) | 3.1962 | Volume Resistivity(25″C,Q-cm) | 2.95×1013 |
| Vickers Hardness | >10 | BreakdownVoltage(V/mA） | ≥11kV/mm |
Laser-Ready Surface Roughness: Front-side specialized polishing down to Ra < 2nm ensuring atomic-level intimacy and zero thermal contact resistance TCR during eutectic bonding or sputtering. Back-side chemical etched or polished up to Ra 30–100nm matching custom dielectric metallization layout.
Total Thickness Variation:
Strictly calibrated TTV < 5μm (across 2-inch wafers) to guarantee uniform pressure distribution during device integration, significantly increasing package yield rates.
DIMENSIONS & SURFACE CHARACTERISTICS
| Standard Sizes ● Optical window flatness(front): Ra<30nm (< 2nm customizable) ● Back surface roughness (front):30-100nm (customizable)(measured area 12Sx125μm) ● Back surfaceroughness(back):30nm-2um (customizable)(measured area 125×125μm) ● TTV:50μm(2 inch) customizable Thickness:<300um(2 inch) customizable |  | Shape Options Available in multiple shapes:  ●Custom shapes and sizes are availablle according to customer drawings. |
High-Power Laser Diodes (LD) & Modules
Prevents wavelength drift and power degradation in multi-watt industrial laser bars by facilitating ultra-fast lateral heat spreading directly beneath the cavity facet.
Wide-Bandgap Semiconductors (GaN on Diamond / SiC)
- Unlocks the true power density potential of Gallium Nitride (GaN) and Silicon Carbide (SiC) RF power amplifiers by dropping junction temperatures by up to 50 ℃
- RF, Microwave & 5G/6G Infrastructure
- Enhances signal integrity and Mean Time Between Failures (MTBF) in solid-state power amplifiers (SSPA) operating under extreme continuous wave (CW) conditions.
· Aerospace & High-Reliability Electronics
- Delivers radiation-hardened, corrosion-resistant thermal defense matrices that endure severe thermal shock profiles in deep-space and defense missions.
Eliminate Downtime & Submount Failures. Unlock Your Engineering Validation Pass.
Every high-performance CVD diamond thermal spreader is born in our state-of-the-art microwave plasma synthesis grid, verified by non-destructive thermal diffusivity testing. Because premium diamond wafers represent a high-value engineering investment, we do not distribute unchecked free handouts. We focus on absolute technical alignment.
Ready to validate the performance leap on your assembly line? Contact our global engineering desk today with your standard configuration requirements (Square, Rectangle, Round, Hexagon, or Special Shapes) and your target thermal conductivity grade (TC1200-TC2000).
While we do not offer free samples, we will wave all metallization engineering fees and custom cutting design charges for verified qualified corporate clients. Secure an Engineering Trial Pass today to receive your evaluation batch at factory-direct wholesale cost, with 100% of the sample evaluation fee fully credited back to your account upon your first bulk commercial order.
FAQ
Q: What is a CVD diamond heat spreader and what makes diamond an exceptional thermal management material?
A: A CVD (Chemical Vapor Deposition) diamond heat spreader is a freestanding polycrystalline diamond plate – typically 0.1 mm to 3.0 mm thick – grown by microwave plasma CVD and used as a substrate or heat-spreading layer in high-power semiconductor devices, laser diodes, GaN-on-diamond RF chips, and power modules. Diamond has the highest known thermal conductivity of any bulk material: 1,800–2,200 W/m·K for high-quality CVD diamond, compared to 390 W/m·K for copper and 150 W/m·K for silicon carbide. This allows CVD diamond heat spreaders to laterally spread heat from a small high-flux source (e.g., laser facet, power transistor junction) at a rate far exceeding any alternative substrate, preventing localized hotspots that degrade device performance and lifetime. CVD diamond is also electrically insulating (resistivity >10^13 Ω·cm), making it compatible with direct contact to active device layers without shorting.
Q: What are the standard dimensions and specifications for CVD diamond heat spreaders?
A: Uking Diamond CVD diamond heat spreaders are available in: thickness range 0.1 mm to 3.0 mm (standard: 0.3 mm, 0.5 mm, 1.0 mm); lateral dimensions from 2×2 mm to 50×50 mm (custom shapes and laser-cut profiles available); thermal conductivity: 1,000–1,800 W/m·K (standard grade) to 1,800–2,200 W/m·K (electronic grade, low nitrogen content); surface roughness after polishing: Ra<5 nm (optical grade); total thickness variation (TTV): <5 μm for standard, <2 μm for precision grade. Both sides can be polished to optical flatness. Metallization (Ti/Pt/Au or Cr/Au stack) can be applied to one or both surfaces for solder bonding to ceramic substrates or device packages.
Q: How is CVD diamond heat spreader thermal conductivity specified and how does it vary across the wafer?
A: CVD diamond thermal conductivity varies with crystal quality, nitrogen impurity content, and film thickness. The growth-side (top surface as grown) typically has higher crystalline quality and thermal conductivity than the nucleation side (bottom surface). For thermal management applications, high-quality CVD diamond is specified with thermal conductivity ≥1,500 W/m·K measured at room temperature (25 °C) by laser flash or 3w method. Note that thermal conductivity decreases significantly at elevated temperatures: diamond at 100 °C has approximately 60–70% of its room-temperature value, which must be accounted for in thermal design. Uking Diamond provides thermal conductivity measurement data with each batch, with mapping across the substrate to confirm spatial uniformity.
