MPCVD Single-Crystal Diamond Plates (Electronic & Optical Grade)
UKing Diamond’s factory-direct homoepitaxial (100)-oriented MPCVD single-crystal diamond substrates combine ultra-high thermal conductivity (1800–2200 W/m·K) with atomic-scale surface flatness, making them ideal for GaN RF devices, quantum photonics, high-power laser windows, and advanced semiconductor applications.
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Description
Uking Diamond’s Single-Crystal Diamond plates are grown via state-of-the-art Microwave Plasma Chemical Vapor Deposition (MPCVD). Free from grain boundaries and binder metals, these pure carbon crystal lattices deliver isotropic thermal transport and optical perfection for critical high-tech frontiers:
GaN HEMT & High-Frequency RF Devices: Acts as the submount directly under the active channels of GaN transistors, reducing thermal resistance to the physical limit and unlocking maximum RF output power density.
High-Power Laser Optical Windows: Capitalizes on ultra-low absorption coefficients and high refractive index to serve as indestructible transmissive windows for multi-kilowatt CO2 or fiber lasers.
Quantum Computing & Sensors: Provides high-purity crystalline matrices for NV (Nitrogen-Vacancy) center creation, driving advancements in quantum magnetometry and quantum computing chips.
Ultra-Precision Diamond Knives & Tooling: Serves as blanks for ultra-precision turning tools capable of achieving mirror-like surface finishes on non-ferrous metals.
Technical Specifications
| Crystallographic & Physical Parameters | Technical Specification Limits |
| Synthesis Growth Method | Homoepitaxial MPCVD (Microwave Plasma CVD) |
| Crystal Orientation | (100) Plane (Ideal for semiconductor epitaxy & bonding) |
| Off-Cut Angle Tolerance | ±3 °(Strict alignment control) |
| Isotropic Thermal Conductivity | 1800–2200 W/m·K (Physical Limit Range) |
| Edge Misorientation / Wedge Angle | < 3° (Ensures geometric coherence) |
| Flexural Strength & Elastic Profile | High Rigidity, Extreme Hardness, Low Friction Coefficient |
| Optical Transparency Band | Broad spectrum transparency across Visible (UV) to Far-Infrared (IR) |
| Refractive Index | ∼2.42 (Premium optical grade profile) |
Dimensions & Surface Roughness Specifications
1.Standard Dimensions
● Available Sizes: 6×6 mm, 10×10 mm, 15×15 mm, 20×20 mm
● Note: Custom micro-shapes available upon request.
2.Length & Width Tolerance
● ±0.05 mm
3.Thickness Options
● Range: 0.3 mm – 1.0 mm
4.Thickness Tolerance Grades
● Grade A: ±30 μm
● Grade B : ±50 μm
5.Surface Roughness (Ra/Sa) Control
● Grade A (Semiconductor/Optical Grade): Ra < 2 nm, Sa < 2 nm
(Atomic-level smoothness for direct wafer bonding)
● Grade B (Industrial Thermal Grade): Ra < 10 nm, Sa < 10 nm
Product Details
- Zero-Defect (100) Crystal Orientation for Next-Gen Sputtering
For Tier-1 semiconductor labs, any grain boundary or misorientation means immediate failure. Uking’s MPCVD Single-Crystal Diamond plates feature strict (100) crystal orientation managed within a tight ±3° off-cut angle.
This precise lattice alignment provides an ideal substrate configuration for direct Gallium Nitride (GaN) or Diamond-on-Silicon integration, allowing flawless atomic deposition and preventing threading dislocations during thermal shock.
- Atomic-Level Roughness via White-Light Interferometry
Thermal contact resistance (TCR) can ruin even the best heat sink. To minimize this, Uking deploies specialized chemical-mechanical polishing (CMP) on our Grade A plates, achieving a record-breaking surface roughness of Ra<2 nm and Sa<2 nm (fully verified via 125×125μm white-light interferometry profiling).
This atomic smoothness eliminates gaps during packaging, allowing the single crystal to instantly siphon heat (2200 W/m⋅K) away from the device junction.
Key Features & Value Drivers
- Ultimate Thermal Performance: Boasts a thermal conductivity up to 2200 W/m·K, instantly resolving localized chip bottlenecks.
- Flawless Crystal Lattice: Pure MPCVD homoepitaxial growth yields a single crystal free of boundaries, guaranteeing isotropic heat and light transmission.
- Atomic Bonding Readiness: Sub-2nm surface roughness enables direct eutectic bonding, eliminating the need for thick, heat-trapping thermal interface materials.
- Broadband Optical Mastery: Unrivaled transparency from UV to infrared makes it the ultimate lens choice for multi-kilowatt laser systems and aerospace windows.
Are Your Next-Gen Components Hitting the Thermal Wall?
Whether you are battling massive thermal resistance in sub-micron GaN gates or facing cracking issues in high-power laser windows under intense optical load, standard materials simply cannot keep up.
Stop gambling your hardware architecture on unverified poly-crystalline or low-grade carbon components.
Backed by 20 years of high-pressure and plasma-synthesis metallurgical authority based in Henan, China, Uking Diamond delivers electronic-grade MPCVD Single-Crystal Diamond substrates that push your engineering boundaries to the physical limit.
Exclusive Industrial Evaluation Program
Because single-crystal diamond wafers represent the pinnacle of superhard material value and cleanroom processing costs, we do not distribute unchecked free samples. We engage exclusively in qualified industrial evaluations to ensure our materials reach engineers who truly need them.
Ready to Eliminate Your Thermal Barriers?
Contact our global semiconductor desk today to unlock your Corporate Evaluation Pass.
How it works:
- Submit Requirements: Provide your standard specs (Size: 6x6mm to 20x20mm), Surface Grade (A or B), and target crystal orientation.
- Get Prioritized Access: Receive a prioritized test batch of standard (100) single-crystal plates at direct factory wholesale cost.
- Full Rebate: 100% of the sample evaluation fee is fully credited back to your balance upon your first bulk commercial order.
FAQ
Q: How does a single-crystal diamond heat spreader differ from CVD polycrystalline diamond in thermal performance?
A: Single-crystal diamond (SCD) heat spreaders have no grain boundaries – the entire substrate is one continuous diamond lattice. Grain boundaries in polycrystalline CVD diamond scatter phonons, reducing thermal conductivity relative to the theoretical maximum. High-quality HPHT or CVD SCD achieves thermal conductivity of 2,000–2,200 W/m·K, close to the theoretical phonon-limit for diamond, versus 1,500–1,800 W/m·K for high-grade polycrystalline CVD. For applications where thermal resistance must be minimized in a thin substrate – laser diode facet heat spreading, single GaN transistor base substrate – single-crystal diamond provides measurably lower thermal resistance per unit thickness. SCD is also used for diamond anvil cell (DAC) windows in high-pressure research, diamond Raman laser substrates, and quantum computing NV-center platforms.
Q: What are the size limitations of single-crystal diamond heat spreaders and how are they produced?
A: Single-crystal diamond heat spreaders are produced by HPHT synthesis (producing rough crystals up to ~15 mm in one dimension, cut from the crystal boule) or by homoepitaxial CVD growth on a SCD seed substrate (enabling larger lateral dimensions and precise thickness control). Current practical size limits: HPHT SCD – up to approximately 10×10 mm lateral dimension in gem-quality material; CVD homoepitaxial – up to approximately 15×15 mm at production scale, with research-scale plates to 30×30 mm available in limited quantities. These size constraints mean SCD is reserved for single-device or small-module applications where the performance benefit justifies the cost premium over polycrystalline CVD, which is available in 50×50 mm or larger substrates.
Q: What surface preparation and metallization options are available for single-crystal diamond heat spreaders?
A: Single-crystal diamond heat spreaders from Uking Diamond are supplied in three surface conditions:
(1) As-lapped – surface roughness Ra 5–20 nm, suitable for most thermal bonding applications.
(2) Polished – Ra<2 nm on one or both faces, for optical and photonic applications, or high-accuracy thermal resistance measurement.
(3) Metallized – Ti/Pt/Au (50/50/200 nm) or Cr/Au stack deposited by sputtering for soldering to copper, AlN, or Si substrates with AuSn or SAC solder.
Laser scribing for dicing and custom shaping is available. Each unit is supplied with: dimensional inspection report, thermal conductivity measurement (laser flash method), and nitrogen content / birefringence classification for optical and quantum applications.
